We have recently developed a formalism to calculate quasiparticle energies within the GW approximation using stochastic orbitals. The GW approximation offeres a highly accurate theory for calculatiing quasiparticle energies in a semiconducting materials. Practical use, however, is limited by the theoretical fourth-order scaling with respect to system size.
We have recently developed a stochastic, orbital-free formalism which effectively circumvents the issues with scaling. In our method, the occupied and virtual orbitals of the Kohn-Sham Hamiltonian are replaced by stochastic orbitals used to evaluate the Green function G, the polarization potential W, and thereby the GW self-energy. The method enables linear scaling calculations, breaking the theoretical scaling limit.
We illustrated the utility of the method for silicon nanoclusters of various sizes, the largest of which have over 3000 electrons, and various organic fullerenes.
In the standard implementation of Kohn-Sham DFT, the electron density is
\(\rho(r) = 2[|\psi_1(r)|^2+|\psi_2(r)|^2+\ldots+|\psi_{\text{HOMO}}(r)|^2 \)Local and semi-local corrlation functionals commonly used within DFT fail to describe long-range van der Waals interactions and other types of dynamical screening effects. Post-DFT corrections to the correlation energy, such as MP2 and RPA, offer a straightforward method for improving estimates of various observables. The main hurdle with higher-order correlation energies is computational complexity. Similar to the research above, we can use stochastic orbitals to replace large sums over occuopied and virtual KS orbitals.
We also develop and implement improved time-dependent density functional theory (TDDFT) approaches suitable for nanoscale device modeling. These include: